1700V IGBT模块

额定电压: 1700V\n额定电流: 2400A\n电路结构: Single\n芯片系列: L Low Loss and Fast IGBT;

1700V IGBT模块

额定电压: 1700V\n额定电流: 2400A\n电路结构: Single\n芯片系列: L Low Loss and Fast IGBT;

1700V IGBT模块

额定电压: 1700V\n额定电流: 2400A\n电路结构: SG=Single\n芯片系列: L=SPT + Low Loss and Fast IGBT;

1700V/2400A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positi

1700V/2400A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positi

1200V/2400A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positi

1200V/2400A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positi

1200V/2400A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

AM/FM Transistor

AM/FM Transistor NPN Silicon

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon planar type

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Silicon planar type

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RF POWER TRANSISTORS NPN SILICON

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