1700V IGBT模块

额定电压: 1700V\n额定电流: 225A\n电路结构: Half Bridge\n芯片系列: T Trench IGBT Medium Power;

1700V IGBT模块

额定电压: 1700V\n额定电流: 225A\n电路结构: HF=Half Bridge\n芯片系列: X Trench IGBT Ultra Fast;

1700V/225A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

1200V/225A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with pos

1200V/225A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

1200V/225A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss They are designed for the applications such as 3-level-application. Features  Low V CE(sat) T rench IGBT technology  V CE(sat) with positive temperature coefficient  Maximum junction temperature 175 o C 

IGBT模块

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)