GD20晶体管资料

  • GD200别名:GD200三极管、GD200晶体管、GD200晶体三极管

  • GD200生产厂家:德国VEB联合企业

  • GD200制作材料:Ge-PNP

  • GD200性质:低频或音频放大 (LF)_功率放大 (L)

  • GD200封装形式:直插封装

  • GD200极限工作电压:30V

  • GD200最大电流允许值:6A

  • GD200最大工作频率:<1MHZ或未知

  • GD200引脚数:2

  • GD200最大耗散功率:12W

  • GD200放大倍数

  • GD200图片代号:E-44

  • GD200vtest:30

  • GD200htest:999900

  • GD200atest:6

  • GD200wtest:12

  • GD200代换 GD200用什么型号代替:AD146,AD166,AD167,AL102,3AD53A,

型号 功能描述 生产厂家 企业 LOGO 操作
GD20

Microwave SLCs

文件:107.28 Kbytes Page:1 Pages

AVX

GD20

Microwave SLCs ULTRA MAXI Series

文件:105.53 Kbytes Page:1 Pages

AVX

1200V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/200A chopper in one package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as inductive heating. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive te

STARPOWER

斯达半导体

1200V/200A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/200A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with

STARPOWER

斯达半导体

650V/200A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/200A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/200A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

1200V/200A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VC

STARPOWER

斯达半导体

1200V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

1700V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra ultrafast switching speed as well as short circuit. ruggedness.They are designed for the applications such as welding machine and inductive heating. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs shor

STARPOWER

斯达半导体

650V/200A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/200A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

1200V/200A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/200A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/200A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  Short circuit capability  VCE(s

STARPOWER

斯达半导体

650V/20A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/20A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V IGBT模块

STARPOWER

斯达半导体

600V/650V IGBT模块

STARPOWER

斯达半导体

600V/650V IGBT模块

STARPOWER

斯达半导体

封装/外壳:TO-220-2 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:1200V 20A TO-220-2 SIC SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

GENESIC

封装/外壳:TO-247-2 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:1200V 20A TO-247-2 SIC SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

GENESIC

GD20产品属性

  • 类型

    描述

  • 型号

    GD20

  • 制造商

    AVX

  • 制造商全称

    AVX Corporation

  • 功能描述

    Microwave SLCs ULTRA MAXI Series

更新时间:2025-12-28 21:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二极管原厂正品全系列现货
STARPOWER
23+
MODULE
10000
原装优质现货订货渠道商
STARPOWER
19+
MODULE
500
原装现货支持BOM配单服务
STARPOWER
25+
IGBT
880000
明嘉莱只做原装正品现货
STARPOWER
2025+
IGBT
4000
原装进口价格优 请找坤融电子!
24+
32000
全新原厂原装正品现货,低价出售,实单可谈
STARPOWER
24+
MODULE
1000
全新原装现货
STAR
2406+
IGBT
11260
诚信经营!进口原装!量大价优!
INTEL
23+
TQFP
5000
原装正品,假一罚十
INFINEON
23+
MODULE
7000

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