您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第9655页 > GC1

GC1晶体管资料

  • GC100别名：GC100三极管、GC100晶体管、GC100晶体三极管

  • GC100生产厂家：德国VEB联合企业

  • GC100制作材料：Ge-PNP

  • GC100性质：低频或音频放大 （LF）_前置放大 （V）

  • GC100封装形式：直插封装

  • GC100极限工作电压：15V

  • GC100最大电流允许值：0.015A

  • GC100最大工作频率：<1MHZ或未知

  • GC100引脚数：3

  • GC100最大耗散功率：0.03W

  • GC100放大倍数：

  • GC100图片代号：C-62

  • GC100vtest：15

  • GC100htest：999900

  • GC100atest：0.015

  • GC100wtest：0.03

  • GC100代换 GC100用什么型号代替：AC122,AC125,AC126,AC151,3AX51B,

GC1价格

参考价格：￥0.0000

型号：GC1 品牌：Genteq 备注：这里有GC1多少钱，2025年最近7天走势，今日出价，今日竞价，GC1批发/采购报价，GC1行情走势销售排行榜，GC1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GC101606-ATC4

SMD Type Green Emitter

Features Topview1016package ViewingAngle=600 Compatiblewithinfraredandvaporphasereflow solderprocess Highreliability UltrabrightGreen RoHScompliance  Applications Opticalindicator. SwitchandSymbolDisplay. Description TheGC101606-ATC4

CTMICRO

CT Micro International Corporation

CTMICRO
GC1085

Telecoms Data Cable

Features: •4,6and8corelinecordage •Tinselcordconductors •PVCsheathedoverall •FCC-68/WesternElectricstyleplugapplication •Extendedlengthapproximately3metres

PROPOWERPro-Power

铂川铂川有限公司

PROPOWER
GC1097

Telecoms Data Cable

Features: •4,6and8corelinecordage •Tinselcordconductors •PVCsheathedoverall •FCC-68/WesternElectricstyleplugapplication •Extendedlengthapproximately3metres

PROPOWERPro-Power

铂川铂川有限公司

PROPOWER
GC1099

Telecoms Data Cable

Features: •4,6and8corelinecordage •Tinselcordconductors •PVCsheathedoverall •FCC-68/WesternElectricstyleplugapplication •Extendedlengthapproximately3metres

PROPOWERPro-Power

铂川铂川有限公司

PROPOWER
GC10DH

Rectifier Diode

FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowprofilepackage *Forsurfacemountedapplications *PlasticpackagehasUnderwritersLab

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10DLH

Low VF Rectifier Diode

FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10GH

Rectifier Diode

FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowprofilepackage *Forsurfacemountedapplications *PlasticpackagehasUnderwritersLab

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10GLH

Low VF Rectifier Diode

FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10JH

Rectifier Diode

FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowprofilepackage *Forsurfacemountedapplications *PlasticpackagehasUnderwritersLab

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10JLH

Low VF Rectifier Diode

FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10KH

Rectifier Diode

FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowprofilepackage *Forsurfacemountedapplications *PlasticpackagehasUnderwritersLab

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10KLH

Low VF Rectifier Diode

FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10MH

Rectifier Diode

FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowprofilepackage *Forsurfacemountedapplications *PlasticpackagehasUnderwritersLab

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10MLH

Low VF Rectifier Diode

FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
GC10MPS12-252

Silicon Carbide Schottky Diode

FEATURES ·HighAvalanche(UIS)Capability ·LowThermalResistance ·ExtremelyFastSwitchingSpeeds APPLICATIONS ·BoostDiodeinPowerFactorCorrection(PFC) ·MotorDrives ·UninterruptiblePowerSupply(UPS) ·SwitchedModePowerSupply(SMPS)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
GC11N60F

Power Factor Correction

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60F

Power Factor Correction (PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60F

Power Factor Correction (PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60K

Power Factor Correction (PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60K

Power Factor Correction (PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60K

Power Factor Correction

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60T

Power Factor Correction

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N60T

Power Factor Correction (PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65D5

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65F

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65K

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65M

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65MA

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65MAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N65T

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N65Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N70F

N-Channel Enhancement Mode Power MOSFET

Description TheGC11N70Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N70F

Power Factor Correction (PFC)

Description TheGC11N70usesadvancedsuperjunctiontechnologyand designtoprovideexcellentRDS(ON)andlowgatecharge.This deviceissuitableforindustryAC-DCSMPSrequirementof PFC,AC/DCpowerconversion,andotherindustrialpower application. Application ●PowerFactorCorre

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N70J

Power Factor Correction (PFC)

Description TheGC11N70usesadvancedsuperjunctiontechnologyand designtoprovideexcellentRDS(ON)andlowgatecharge.This deviceissuitableforindustryAC-DCSMPSrequirementof PFC,AC/DCpowerconversion,andotherindustrialpower application. Application ●PowerFactorCorre

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N70K

Power Factor Correction (PFC)

Description TheGC11N70usesadvancedsuperjunctiontechnologyand designtoprovideexcellentRDS(ON)andlowgatecharge.This deviceissuitableforindustryAC-DCSMPSrequirementof PFC,AC/DCpowerconversion,andotherindustrialpower application. Application ●PowerFactorCorre

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC11N70T

Power Factor Correction (PFC)

Description TheGC11N70usesadvancedsuperjunctiontechnologyand designtoprovideexcellentRDS(ON)andlowgatecharge.This deviceissuitableforindustryAC-DCSMPSrequirementof PFC,AC/DCpowerconversion,andotherindustrialpower application. Application ●PowerFactorCorre

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC120N65QF

N-Channel Enhancement Mode Power MOSFET

Description TheGC120N65QFusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC125N65FF

N-Channel Enhancement Mode Power MOSFET

Description TheGC125N65FFusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
GC1300

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1301

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1302

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1303

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1304

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1305

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1306

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1307

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1308

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1309

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1310

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC1500

30 VOLT ABRUPT JUNCTION VARACTOR DIODES

TheGC1500seriesvaractorsaresiliconabruptjunctiondevices.TheyofferthehighestQandlowestseriesresistanceavailableina30Voltsiliconvaractor. TheGC1500seriesvaractorsareusedfornarrowtomoderatebandwidthtuning.TheyareavailableinvaluesappropriateforVHFthr

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15001

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15001-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15002

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15002-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15003

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15003-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15004

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15004-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15005

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15005-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15006

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
GC15006-00

TUNING DIODES Frequency Linear Tuning Varactors TM

DESCRIPTION AFrequencyLinearTuningVaractor(FLTVAR™)isasiliconepitaxialmesadevice,designedtoprovidewidebandLinearTuninginVCOandfilterapplications. Thesediodesfeaturesuperiorpassivationforhighreliability,lowleakagecurrent,andlowsurfacenoise.TheyofferQvalues

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

GC1产品属性

  • 类型

    描述

  • 型号

    GC1

  • 制造商

    GC Electronics

  • 功能描述

    Lead Acid Rectangular 12V 1.2Ah Rechargeable

GC1供应商更多...

更新时间：2025-6-27 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
讯运(深圳/上海)电子有限公司
GC1025A
Gcore(上海国芯)
2021+
SOP-8
499
询价
深圳市粤骏腾电子科技有限公司
GC1025A
国产
24+
SOP-8
88888
大批量供应优势库存热卖
询价
深圳市东来宝电子科技有限公司
GC102
G2
24+
PLCC84
22055
郑重承诺只做原装进口现货
询价
深圳市航润创能电子集团有限公司
GC1024
GALAXYCORE
21+
CSP
33
原装现货假一赔十
询价
深圳市纳艾斯科技有限公司
GC102-PC
HEAD
24+
PLCC
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市星辰微电科技有限公司
GC1029
格科微
22+
CSP
5000
格科微CIS产品全系列在售
询价
深圳市赛尔通科技有限公司
GC101A-PC
HEAD
23+
65480
询价
深圳市芯皇电子有限公司
GC1029
格科微
22+
CSP
4560
专业配单,原装正品假一罚十,代理渠道价格优
询价
贸泽芯城（深圳）电子科技有限公司
GC102/BIA4000
23+
PLCC
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市科恒伟业电子有限公司
GC1024
2126+
985
只做原装正品现货!或订货假一赔十!
询价

GC1芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

GC1规格书下载地址

GC1参数引脚图相关

GC1数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示