8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Reverse Voltage - 100 to 1000 V Forward Current – 8.0A FEATURES ♦ Surge overload rating-220 amperes peak ♦ Polarity:As marked on body ♦ Ideal for printed circuit board ♦ Plastic material has U/L The flammability classification 94V-0 ♦ Reliable low cost construction utilizing molded plas

SINGLE PHASE 8.0AMP GLASS PASSIVATED BRIDGE RECTIFIER

Features • Glass passivated die construction • Low forward voltage drop • High current capability • High surge current capability • Plastic material-UL flammability 94V-0

BRIDGE RECTIFIERS

FEATURES • UL Recognized File # E469616 • Glass passivated chip junction • Reliable low cost construction utilizing molded plastic technique • Ideal for printed circuit board • Low forward voltage drop • Low reverse leakage current • High surge current capability

封装/外壳：4-ESIP 包装：散装 描述：BRIDGE RECT 1PHASE 800V 8A GBU 分立半导体产品 二极管 - 桥式整流器

大功率桥堆

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)