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GBU808C

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has U/L flammability classification 94V-0 ● Mounting pos

HY

虹扬科技

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

GBU808C产品属性

  • 类型

    描述

  • 型号

    GBU808C

  • 制造商

    HY

  • 制造商全称

    HY ELECTRONIC CORP.

  • 功能描述

    SILICON BRIDGE RECTIFIERS

更新时间:2026-3-18 14:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
GBU
50000
只做原装,欢迎询价,量大价优
DIODES/美台
21+
GBU
30000
百域芯优势 实单必成 可开13点增值税
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
DIODES/美台
23+
GBU
12730
原装正品代理渠道价格优势
SEP
25+
DIP4
6115
百分百原装正品 真实公司现货库存 本公司只做原装 可
SEP
25+
90000
一级代理商进口原装现货、价格合理
LITEON/光宝
25+
GBU
30000
全新原装现货,价格优势
24+
GBU-4
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
LITEON/光宝
24+
DIP-4
60000
全新原装现货
DIODES/美台
24+
GBU
1035
原装现货,专业配单专家

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