Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：174.54 Kbytes Page：10 Pages

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：152.86 Kbytes Page：9 Pages

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：175.8 Kbytes Page：10 Pages

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：155.16 Kbytes Page：9 Pages

IGBT FOUR PAK MODULE

文件：188.43 Kbytes Page：9 Pages

IGBT Fourpack Module, 75 A

文件：231.64 Kbytes Page：10 Pages