Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A

FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RBS

Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED짰 Diodes, 5 A

FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RB

Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED짰 Diodes, 5 A

FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RB

Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A

FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RBS