位置：首页 > IC中文资料 > GAN063-650WSA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GAN063-650WSA | 650 V, 50 mΩ Gallium Nitride (GaN) FET 1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefit | NEXPERIA 安世 |   | |
GAN063-650WSA | 650 V、50 mΩ氮化镓(GaN) FET，采用TO-247封装 | NEXPERIA 安世 | |
更新时间：2025-10-28 15:43:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANA |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
CentralLAb |
25+ |
5600 |
公司优势库存 热卖中!! |
||||
Nexperia(安世) |
24+ |
TO-247 |
8004 |
支持大陆交货,美金交易。原装现货库存。 |
|||
PMI |
22+ |
DIP |
5000 |
进口原装!现货库存 |
|||
GOLDENTEK DISPLAY AMERICA |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
Nexperia(安世) |
2447 |
TO-247-3 |
115000 |
300个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
BN |
23+ |
16+ |
6500 |
专注配单,只做原装进口现货 |
|||
PMI |
QQ咨询 |
DIP |
110 |
全新原装 研究所指定供货商 |
|||
ADI(亚德诺) |
24+ |
PDIP-18 |
10000 |
现货 |
|||
高登 |
25+ |
DIP |
2200 |
国产替换现货降本 |
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