型号 功能描述 生产厂家&企业 LOGO 操作
GAL22V10D-15LP

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice
GAL22V10D-15LP

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice
GAL22V10D-15LP

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice
GAL22V10D-15LP

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice
GAL22V10D-15LP

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice
GAL22V10D-15LP

封装/外壳:24-DIP(0.300",7.62mm) 包装:散装 描述:IC CPLD 10MC 15NS 24DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

封装/外壳:24-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 15NS 24DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

AllDevicesDiscontinued

文件:718.73 Kbytes Page:23 Pages

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-15LP产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-15LP

  • 功能描述

    SPLD - 简单可编程逻辑器件 5V 22 I/O

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2024-4-23 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE
19+
DIP24
72231
原厂代理渠道,每一颗芯片都可追溯原厂;
LATTIC
23+
DIP
5000
原装正品,假一罚十
LAT
23+
65480
Lattice
00+
DIP-24
46
原装现货海量库存欢迎咨询
LATTICE
2018+
SMD
20000
一级代理原装现货假一罚十
LATTICE
23+
QFP
18000
Lattice(莱迪斯)
23+
标准封装
10048
原厂渠道供应,大量现货,原型号开票。
LATTICE/莱迪斯
21+
DIP24
9080
只做原装,质量保证
LATTICE/莱迪斯
21+
DIP-24
9852
只做原装正品假一赔十!正规渠道订货!
LATTICE
2021+
23+
16500
代理授权直销,原装现货,假一罚十,长期稳定供应,特

GAL22V10D-15LP芯片相关品牌

  • ABC
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  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

GAL22V10D-15LP数据表相关新闻