位置:首页 > IC中文资料第1462页 > GAL22V10D-25QJN
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
GAL22V10D-25QJN | GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | ||
GAL22V10D-25QJN | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | ||
GAL22V10D-25QJN | 封装/外壳:28-LCC(J 形引线) 包装:托盘 描述:IC CPLD 10MC 25NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件) | ETC 知名厂家 | ETC | |
GAL22V10D-25QJN | IC CPLD 10MC 25NS 28PLCC | Lattice 莱迪思 | ||
GAL22V10D-25QJN | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
GAL22V10D-25QJN | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | |||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 |
GAL22V10D-25QJN产品属性
- 类型
描述
- 型号
GAL22V10D-25QJN
- 功能描述
SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE/莱迪斯 |
2450+ |
PLCC |
9850 |
只做原装正品现货或订货假一赔十! |
|||
LATTICE |
25+23+ |
PLCC |
17681 |
绝对原装正品全新进口深圳现货 |
|||
LATTICE |
24+ |
DIP24 |
65 |
||||
LATTICE |
PLCC28 |
220 |
正品原装--自家现货-实单可谈 |
||||
LATTICE |
17+ |
PLCC |
6200 |
100%原装正品现货 |
|||
LATTICE/莱迪斯 |
2023+ |
PLCC |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
LATTICE/莱迪斯 |
25+ |
PLCC |
860000 |
明嘉莱只做原装正品现货 |
|||
LATTICE |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
LTT |
23+ |
SOP |
5000 |
原装正品,假一罚十 |
|||
LatticeSemiconductorCorporatio |
23+ |
28-LCCJ |
6320 |
只做原装,主打品牌QQ询价有询必回 |
GAL22V10D-25QJN芯片相关品牌
GAL22V10D-25QJN规格书下载地址
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GAL22V10D-25QJN数据表相关新闻
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DdatasheetPDF页码索引
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