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GAL22V10D-25价格
参考价格：￥75.7917
型号：GAL22V10D-25LPI 品牌：Lattice Semi 备注：这里有GAL22V10D-25多少钱，2025年最近7天走势，今日出价，今日竞价，GAL22V10D-25批发/采购报价，GAL22V10D-25行情走势销售排行榜，GAL22V10D-25报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 |  |   | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
封装/外壳：28-LCC（J 形引线） 包装：散装 描述：IC CPLD 10MC 25NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
封装/外壳：28-LCC（J 形引线） 包装：管件 描述：IC CPLD 10MC 25NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | |
GAL22V10D-25产品属性
- 类型
描述
- 型号
GAL22V10D-25
- 功能描述
Electrically-Erasable PLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LATTICE |
23+ |
DIP |
31 |
原装正品现货 |
|||
LATTICE |
24+ |
24-PDIP |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
LATTICE |
22+ |
DIP24 |
12245 |
现货,原厂原装假一罚十! |
|||
最新 |
2000 |
原装正品现货 |
|||||
LATTICE/莱迪斯 |
24+ |
DIP24 |
12000 |
原装正品 有挂就有货 |
|||
LATTICE |
24+ |
DIP |
4000 |
原装原厂代理 可免费送样品 |
|||
Lattice(莱迪斯) |
23+ |
特价 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LATTICE |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Lattice |
23+ |
DIP |
27560 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Lattice Semiconductor Corporat |
23+ |
24-PDIP |
7300 |
专注配单,只做原装进口现货 |
GAL22V10D-25芯片相关品牌
GAL22V10D-25规格书下载地址
GAL22V10D-25参数引脚图相关
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- GAX-2-64
- GATELEAD-28129
- GASSN-GM-393
- GASSENSOREVM
- GASKET
- GAP-CAB
- GAP3SLT33-220FP
- GAP3SLT33-214
- GAP1605
- GAP103
- GAP05SLT80-220
- GANFETBOOKSIMPLIFIEDCHINESEVERSION
- GAM0404
- GALILEO2934953
- GALILEO2.P
- GALILEO1.Y936726
- GALILEO1.Y
- GALI-49
- GALI-4
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL26CV12C-7LJ
- GAL22V10D-25LPI
- GAL20V8
- GAL1883
- GAL16V8D-5LJ
- GAL16V8D-15LJN
- GAL16V8
- GAL16LV8D-3LJ
- GAINEQUALIZERSAMPLEKIT
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GAD1213024
- GABJ506
- GABJ504
- GABJ503
- GAA8038-230BB
- GAA800BB18A2
- GAA6R014
- GAA6R012
- GAA6R005
- GAA3R505
- GAA16006
- GAA16005
- GAA16004
- GAA10006
- GAA10005
- GA8-6D05R
- GA8-6D05
- GA8-6B02
- GA8-2B02
GAL22V10D-25数据表相关新闻
GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-25LJ，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-25LP，集成电路（IC） 嵌入式-CPLD（复杂可编程逻辑器件）
全新原装，公司现货销售
2019-8-21GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20GALI-21+单片放大器射频IC深圳市益中天科技发展有限公司
GALI-21+单片放大器射频IC
2019-4-9
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