型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-15QPN

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-15QPN

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL22V10D-15QPN

封装/外壳:24-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 15NS 24DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-15QPN

IC CPLD 10MC 15NS 24DIP

Lattice

莱迪思

GAL22V10D-15QPN

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-15QPN

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-15QPN产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-15QPN

  • 功能描述

    SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-9-24 11:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
22+
5000
LATTICE/莱迪斯
23+
CDIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
LATTICE/莱迪斯
2447
DIP-24
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Lattice Semiconductor Corporat
23+
24-PDIP
7300
专注配单,只做原装进口现货
Lattice
2318+
DIP-24
4980
Lattice全系列进口原装特价
LATTICE/莱迪斯
24+
N/A
13718
只做原装 公司现货库存
LATTICE
23+
PLCC28
7000
绝对全新原装!100%保质量特价!请放心订购!
LATTICE
24+
PLCC28
78
Lattice
25+
电联咨询
7800
公司现货,提供拆样技术支持
LATTICE
24+
CDIP
21580
原装现货

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