位置：首页 > IC中文资料第5633页 > GAL22V10D-10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 |  |   | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
封装/外壳：28-LCC（J 形引线） 包装：散装 描述：IC CPLD 10MC 10NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
封装/外壳：28-LCC（J 形引线） 包装：管件 描述：IC CPLD 10MC 10NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | |
GAL22V10D-10产品属性
- 类型
描述
- 型号
GAL22V10D-10
- 功能描述
Electrically-Erasable PLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LATTICE |
24+ |
PLCC28 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
LATTICE |
01+ |
PLCC28 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LAT |
9816 |
100 |
公司优势库存 热卖中! |
||||
LATTICE |
17+ |
PLCC28 |
9988 |
只做原装进口,自己库存 |
|||
LATTICE |
2022 |
PLCC |
105 |
||||
Lattice Semiconductor Corporat |
23+ |
28-LCC |
11200 |
主营:汽车电子,停产物料,军工IC |
|||
LATTICE |
5632 |
2015 |
只做进口原装正品!现货或者订货一周货期!只要要网上 |
||||
LATTICE |
24+ |
PLCC-28 |
30617 |
LATTICE专营品牌全新原装热卖 |
|||
LATTICE/莱迪斯 |
PLCC28 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
LATTICE/莱迪斯 |
23+ |
PLCC24 |
15000 |
全新原装现货,假一赔十。 |
GAL22V10D-10芯片相关品牌
GAL22V10D-10规格书下载地址
GAL22V10D-10参数引脚图相关
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- GALI-49
- GALI-4
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL22V10D-15LJN
- GAL22V10D-15LJI
- GAL22V10D-15LJ
- GAL22V10D15LJ
- GAL22V10D-15LD/883
- GAL22V10D-10QPN
- GAL22V10D-10QP
- GAL22V10D-10QJN
- GAL22V10D-10QJ
- GAL22V10D-10LS
- GAL22V10D-10LPNI
- GAL22V10D-10LPN
- GAL22V10D-10LPI
- GAL22V10D-10LP
- GAL22V10D-10LJNI
- GAL22V10D-10LJN
- GAL22V10D-10LJI
- GAL22V10D-10LJ
- GAL22V10D10LJ
- GAL22V10D-10LD/883
- GAL22V10C-7LPI
- GAL22V10C-7LP
- GAL22V10C-7LJI
- GAL22V10C-7LJ
- GAL22V10C-5LJ
- GAL22V10C-15LPI
- GAL22V10C-15LJI
- GAL22V10C-10LR/883
- GAL22V10C-10LPI
- GAL22V10C-10LP
- GAL22V10C-10LJI
- GAL22V10C-10LJ
- GAL22V10C-10LD/883
- GAL22V10B-7LPI
- GAL22V10B-7LP
- GAL22V10B-7LJ
- GAL22V10B-30LD/883
- GAL22V10B-25QP
- GAL22V10B-25QJ
- GAL22V10B-25LPI
- GAL20V8
- GAL1883
- GAL16V8
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GABJ506
- GABJ504
- GABJ503
GAL22V10D-10数据表相关新闻
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20GAL20V8C-10LJ公司原装现货/随时可以发货
GAL20V8C-10LJ公司原装现货/随时可以发货
2019-4-16GAL20V8C-5LJ公司原装现货/随时可以发货
GAL20V8C-5LJ公司原装现货/随时可以发货
2019-4-16
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