位置:首页 > IC中文资料第12692页 > GAL22V10B-1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic™ | Lattice 莱迪思 |
GAL22V10B-1产品属性
- 类型
描述
- 型号
GAL22V10B-1
- 制造商
LATTICE
- 制造商全称
Lattice Semiconductor
- 功能描述
High Performance E2CMOS PLD Generic Array Logic
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOP-8 |
13718 |
只做原装 公司现货库存 |
|||
Lattice |
25+ |
100 |
公司优势库存 热卖中!! |
||||
Lattice |
23+ |
PLCC28 |
1137 |
全新原装正品现货,支持订货 |
|||
LATTICE |
25+ |
PLCC28 |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
|||
LATTICE/莱迪斯 |
25+ |
plcc |
996880 |
只做原装,欢迎来电资询 |
|||
LATTUCE |
25+ |
PLCC |
680 |
原装现货热卖中,提供一站式真芯服务 |
|||
LATTICE |
23+ |
PLCC28 |
65480 |
||||
Lattice |
23+ |
SOP |
27218 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
LATTICE |
25+23+ |
PLCC |
38825 |
绝对原装正品全新进口深圳现货 |
|||
Lattice |
1327+ |
PLCC |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
GAL22V10B-1规格书下载地址
GAL22V10B-1参数引脚图相关
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GAL22V10B-1数据表相关新闻
GAL22V10B-20LD/883,GAL22V10B-25LJI,GAL22V10C-10LP,
GAL22V10B-20LD/883,GAL22V10B-25LJI,GAL22V10C-10LP,
2020-4-24GAL22V10D-10LPN,集成电路(IC)
全新原装,公司现货销售
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2019-4-16
DdatasheetPDF页码索引
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