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型号 功能描述 生产厂家 企业 LOGO 操作
GA201

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

MICROSEMI

美高森美

GA201

Thyristor SCR 3-Pin 100V TO-18

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The Rise time: 10ns.\n Delay time: 10ns.\n Recovery time: 0.5µs.\n Pulse current: to 100A.\n Turn on with 20ns, 10mA Gate Pulse.;

MICROCHIP

微芯科技

GA201

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件:173.42 Kbytes Page:4 Pages

DIGITRON

GA201

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:散装 描述:SCR 分立半导体产品 晶闸管 - SCR

MICROCHIP

微芯科技

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

MICROSEMI

美高森美

Thyristor SCR 3-Pin 100V TO-18

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The Rise time: 10ns.\n Delay time: 10ns.\n Recovery time: 0.5µs.\n Pulse current: to 100A.\n Turn on with 20ns, 10mA Gate Pulse.;

MICROCHIP

微芯科技

Thyristor SCR 3-Pin 100V TO-18

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The Rise time: 10ns.\n Delay time: 10ns.\n Recovery time: 0.5µs.\n Pulse current: to 100A.\n Turn on with 20ns, 10mA Gate Pulse.;

MICROCHIP

微芯科技

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件:173.42 Kbytes Page:4 Pages

DIGITRON

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:散装 描述:SCR 100V TO18 分立半导体产品 晶闸管 - SCR

MICROCHIP

微芯科技

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

GA201产品属性

  • 类型

    描述

  • 输出功率:

    3.0W(5.0V、4Ω、10%)

  • 输出通道/HP:

    1/X

  •  电源电压抑制比(1K):

    75

  • Gain(dB):

    由外部电阻

  • 过热保护:

    V

  • 静音/关闭:

    X/V

  • 封装:

    DFN-8(3*3)

更新时间:2026-5-22 23:00:00
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GAMMACOMM
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MMC
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NEWINORIGINAL
24+
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新进库存/原装
MMC
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尼赛拉
2003
SOT143
6030
全新 发货1-2天
NICE尼赛斯
23+
SOT-143
7300
专注配单,只做原装进口现货

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