GA2价格

参考价格:¥730.9031

型号:GA2 品牌:Bogen Communications 备注:这里有GA2多少钱,2025年最近7天走势,今日出价,今日竞价,GA2批发/采购报价,GA2行情走势销售排行榜,GA2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GA2

包装:袋 描述:GAUGE ADAPTOR 工业自动化与控制 气动,液压 - 配件

ETC

知名厂家

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

HALF-BRIDGE IGBT INT-A-PAK

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

IRF

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

IRF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Increased

VishayVishay Siliconix

威世科技威世科技半导体

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

VishayVishay Siliconix

威世科技威世科技半导体

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

VishayVishay Siliconix

威世科技威世科技半导体

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

VishayVishay Siliconix

威世科技威世科技半导体

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

VishayVishay Siliconix

威世科技威世科技半导体

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) •

IRF

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance (≤ 5 nH typical) • Industry standard o

VishayVishay Siliconix

威世科技威世科技半导体

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

ISC

无锡固电

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

IRF

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFRED™antiparallel diodes with ultra-soft recovery • Industry stan

IRF

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ul

VishayVishay Siliconix

威世科技威世科技半导体

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ul

IRF

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

封装/外壳:磁珠 包装:散装 描述:THERM NTC 2.252KOHM 3976K BEAD 传感器,变送器 温度传感器 - NTC 热敏电阻器

ETC

知名厂家

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件:173.42 Kbytes Page:4 Pages

DIGITRON

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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DIGITRON

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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DIGITRON

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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DIGITRON

Normally ??OFF Silicon Carbide Junction Transistor

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GENESIC

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OFF Silicon Carbide Junction Transistor

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OFF Silicon Carbide Junction Transistor

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GENESIC

Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

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GENESIC

Transistor/Schottky Diode Co-pack

文件:958.66 Kbytes Page:9 Pages

GENESIC

OFF Silicon Carbide Junction Transistor

文件:1.4756 Mbytes Page:13 Pages

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

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IVO

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IVO

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IVO

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IVO

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Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

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IVO

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IVO

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IVO

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Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟电子

替换型号 功能描述 生产厂家&企业 LOGO 操作

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日立日立公司

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三洋三洋电机株式会社

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美国国家半导体美国国家半导体公司

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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德州仪器

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NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

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ONSEMI

安森美半导体

Quad Single Supply Comparators

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Quad voltage comparator

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UTC

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HTCHTC Korea TAEJIN Technology Co.

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consists of four independent voltage comparators

ESTEK

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FCI

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Quad Single Supply Comparators

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NSCNational Semiconductor (TI)

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NSCNational Semiconductor (TI)

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德州仪器

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Single Supply Quad Comparators

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德州仪器

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HTCHTC Korea TAEJIN Technology Co.

泰进韩国泰进技术股份有限公司

Quad Comparator

FairchildFairchild Semiconductor

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QUAD VOLTAGE COMPARATOR

HTCHTC Korea TAEJIN Technology Co.

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Low Power Low Offset Voltage Quad Comparators

TGS

QUAD COMPARATOR

Fujitsu

富士通

Quad voltage comparator

Philips

飞利浦

Single Supply Quad Comparators

ONSEMI

安森美半导体

Single Supply Quad Comparators

ONSEMI

安森美半导体

Quad Single Supply Comparators

Motorola

摩托罗拉

SINGLE-SUPPLY QUAD COMPARATOR

NJRCNew Japan Radio

新日本无线株式会社

Integrated Circuit Low Power Low Offset Voltage Comparator

NTE

QUAD COMPARATOR

TOSHIBA

东芝

INDUSTRIAL LINEAR ICS

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

LOW POWER QUAD COMPARATOR

NEC

瑞萨

GA2产品属性

  • 类型

    描述

  • 型号

    GA2

  • 制造商

    Bogen Communications

  • 功能描述

    Amplifier, general purpose, 1.5 watt

  • 制造商

    Bogen Communications

  • 功能描述

    1.5W Utility Amplifier

  • 制造商

    ENERPAC

  • 功能描述

    GAUGE ADAPTOR

更新时间:2025-8-8 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GATAX
2023+
QFN
53500
正品,原装现货
GEOYOUNG
24+
SMD
990000
明嘉莱只做原装正品现货
19+
MODULE
1290
主打模块,大量现货供应商QQ2355605126
TI/德州仪器
23+
MSOP8
15000
全新原装现货,价格优势
TE/泰科
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TE connectivity
21+
100
全新原装鄙视假货
MURATA/村田
24+
1812L
8950
BOM配单专家,发货快,价格低
IR
23+
200A1200
595
全新原装正品,量大可订货!可开17%增值票!价格优势!
GATAX
23+
BGA
3220
原装正品公司现货价格优惠欢迎查询
原厂
2023+
模块
600
专营模块,继电器,公司原装现货

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