SCRsNuclearRadiationResistant,Planar

文件：202.17 Kbytes Page：4 Pages

Squareframepapercone-alnicomagnet

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SPEAKER

FEATURES •103mm •squareframe •2W •8Ω •AlNiComagnet •papercone

iscN-ChannelTransistor

DESCRIPTION ·OptionalGateReturnPin ·ExceptionalSafeOperatingArea ·ExcellentGainLinearity ·PositiveTemperatureCoefficientofRDS,ON APPLICATIONS ·DC-DCconverters ·PulseGenerators ·DCChoppers

SiCMOSFETPowerModule

DESCRIPTION ·SiCMOSFET ·PositiveTemperatureCoefficient ·LowInductance ·IsolatedCopperBaseplateUsingDBCTechnology ·SOT-227Package APPLICATIONS ·ACandDCMotorControl ·PFC ·SMPS ·BrakeSwitch

SiCMOSFETPowerModule

DESCRIPTION ·SiCMOSFET ·PositiveTemperatureCoefficient ·LowInductance ·IsolatedCopperBaseplateUsingDBCTechnology ·SOT-227Package APPLICATIONS ·ACandDCMotorControl ·PFC ·SMPS ·BrakeSwitch

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFastTM:Optimizedforminimumsaturationvoltageandoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •Fullyisolatedpackage(2,500VoltAC/RMS) •Verylowinternalinductance(≤5nHtyp.) •Industry

InsulatedGateBipolarTransistor(Warp2SpeedIGBT),100A

FEATURES •Ultrafast:Optimizedforminimumsaturationvoltageandspeed0to40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •Fullyisolatedpackage(2500VAC/RMS) •Verylowinternalinductance(5nHtypical) •Industrystandardo

InsulatedGateBipolarTransistor(Warp2SpeedIGBT),100A

FEATURES •Ultrafast:Optimizedforminimumsaturationvoltageandspeed0to40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •Fullyisolatedpackage(2500VAC/RMS) •Verylowinternalinductance(5nHtypical) •Industrystandardo

HALF-BRIDGEIGBTINT-A-PAK

Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULapproved •Generation4IGBTtechnology B

Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),100A

FEATURES •Generation4IGBTtechnology •Ultrafast:Optimizedforhighspeed8kHzto40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED®antiparalleldiodeswithultrasoftrecovery •Industrystandardpackage •ULapprovedfileE78996

StandardSpeedIGBT

Features •StandardSpeedPTIgbtTechnology •FredPTAntiparalleldiodeswithFastrecovery •VeryLowConductionLosses •Al2O3DBC •ULPending Benefits •Optimizedforhighcurrentinverterstages(ACTIGweldingmachines) •Directmountingtoheatsink •Hardswitchingoperationfreq

Half-BridgeIGBTINT-A-PAK(StandardSpeedIGBT),100A

FEATURES •StandardspeedPTIGBTtechnology •Optimizedforhardswitchingspeed •FREDPt®antiparalleldiodeswithfastrecovery •Verylowconductionlosses •Al2O3DBC •ULapprovedfileE78996 •Designedforindustriallevel •Materialcategorization:fordefinitionsofcompliancepl

HALF-BRIDGEIGBTINT-A-PAKStandardSpeedIGBT

Features •Generation4StandardSpeedIGBTTechnology •QuietIRAntiparalleldiodeswithFastSoftrecovery •VeryLowConductionLosses •IndustryStandardPackage •AluminumNitrideDBC •ULapproved(fileE78996) Benefits •Optimizedforhighcurrentinverterstages(ACTIGweldingmac

HALF-BRIDGEIGBTINT-A-PAK

Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULrecognitionpending •Generation4IGBTte

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS GAUGE 5\ 传感器，变送器 压力传感器、变送器

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS DIFF 10\ 传感器，变送器 压力传感器、变送器

OFFSiliconCarbideJunctionTransistor

文件：1.42213 Mbytes Page：12 Pages

OFFSiliconCarbideJunctionTransistor

文件：1.42119 Mbytes Page：12 Pages

DoublePulseTestBoard

文件：533.2 Kbytes Page：6 Pages

Transistor/SchottkyDiodeCo-pack

文件：258.07 Kbytes Page：9 Pages

SiliconCarbideJunctionTransistor/SchottkyDiodeCo-pack

文件：1.48482 Mbytes Page：13 Pages

HALF-BRIDGEIGBTINT-A-PAK

文件：216.11 Kbytes Page：10 Pages

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

100/200

文件：3.83844 Mbytes Page：2 Pages

TOGGLESWITCHES-MINIATURE

文件：1.55809 Mbytes Page：10 Pages