SCRs Nuclear Radiation Resistant, Planar

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Square frame paper cone - alnico magnet

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SPEAKER

FEATURES • 103 mm • square frame • 2 W • 8 Ω • AlNiCo magnet • paper cone

isc N-Channel Transistor

DESCRIPTION ·Optional Gate Return Pin ·Exceptional Safe Operating Area ·Excellent Gain Linearity ·Positive Temperature Coefficient of RDS,ON APPLICATIONS ·DC-DC converters ·Pulse Generators ·DC Choppers

SiC MOSFET Power Module

DESCRIPTION ·SiC MOSFET ·Positive Temperature Coefficient ·Low Inductance ·Isolated Copper Baseplate Using DBC Technology ·SOT-227 Package APPLICATIONS ·AC and DC Motor Control ·PFC ·SMPS ·Brake Switch

SiC MOSFET Power Module

DESCRIPTION ·SiC MOSFET ·Positive Temperature Coefficient ·Low Inductance ·Isolated Copper Baseplate Using DBC Technology ·SOT-227 Package APPLICATIONS ·AC and DC Motor Control ·PFC ·SMPS ·Brake Switch

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2,500 Volt AC/RMS) • Very low internal inductance (≤ 5 nH typ.) • Industry

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

HALF-BRIDGE IGBT INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A

FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery • Industry standard package • UL approved file E78996

Standard Speed IGBT

Features • Standard Speed PT Igbt Technology • Fred PT Antiparallel diodes with Fast recovery • Very Low Conduction Losses • Al2O3 DBC • UL Pending Benefits • Optimized for high current inverter stages (AC TIG welding machines) • Direct mounting to heatsink • Hard switching operation freq

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 100 A

FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt® antiparallel diodes with fast recovery • Very low conduction losses • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance pl

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features • Generation 4 Standard Speed IGBT Technology • QuietIR Antiparallel diodes with Fast Soft recovery • Very Low Conduction Losses • Industry Standard Package • Aluminum Nitride DBC • UL approved (file E78996) Benefits • Optimized for high current inverter stages (AC TIG welding mac

HALF-BRIDGE IGBT INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL recognition pending • Generation 4 IGBT te

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS GAUGE 5\ 传感器，变送器 压力传感器、变送器

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS DIFF 10\ 传感器，变送器 压力传感器、变送器

OFF Silicon Carbide Junction Transistor

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OFF Silicon Carbide Junction Transistor

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Double Pulse Test Board

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Transistor/Schottky Diode Co-pack

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Silicon Carbide Junction Transistor/Schottky Diode Co-pack

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HALF-BRIDGE IGBT INT-A-PAK

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Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

100/200

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TOGGLE SWITCHES - MINIATURE

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