丝印代码：G900N10；N-Channel Enhancement Mode Power MOSFET

Description The G900N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G900P15；P-Channel Enhancement Mode Power MOSFET

Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G900P15；P-Channel Enhancement Mode Power MOSFET

Description The G900P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G900P15；P-Channel Enhancement Mode Power MOSFET

Description The G900P15A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

丝印代码：G900P15；P-Channel Enhancement Mode Power MOSFET

Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G900P15；P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

500mA Low-Dropout Linear Regulators

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G-SERIES SERVO SYSTEM

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网口变压器

Single Output

300mA Low-Dropout Linear Regulators

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X波段 GaN功率管

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

Ultra High Sensitivity Gateable Photon Counting Module

Description The Photon Counting Head MP 900 series is designed for applications in all fields of single photon detection, e.g. chemoluminescence, bioluminescence, in-vitro assay, environmental measurements or pure research. It is an easy to use module, containing the Channel Photomultiplier, a hi

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

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