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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
Low Switching Losses 文件：295.88 Kbytes Page：9 Pages | IRF | | ||
Low Switching Losses 文件：320.69 Kbytes Page：10 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
950 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
1052+ |
TO-3P |
456 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2023+ |
TO-3P |
6895 |
原厂全新正品旗舰店优势现货 |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
IR |
10+ |
TO-247 |
2060 |
||||
IR |
23+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
IR |
24+ |
TO-247 |
2060 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-247 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
IR |
24+ |
TO-3P |
43200 |
郑重承诺只做原装进口现货 |
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G7PH35UD1-E规格书下载地址
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DdatasheetPDF页码索引
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