| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06LLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
丝印代码：G700P06；P-Channel Enhancement Mode Power MOSFET Description The G700P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
INDUSTRY STANDARDS 文件：1.519 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
-60V P Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | ||
Trench Mosfet | GOFORD 谷峰半导体 | | ||
-60V P Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | ||
INDUSTRY STANDARDS 文件：1.519 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
INDUSTRY STANDARDS 文件：1.519 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
INDUSTRY STANDARDS 文件：1.519 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
INDUSTRY STANDARDS 文件：1.519 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | |
G700产品属性
- 类型
描述
- Configuration：
P channel
- ESD：
NO
- VDS(min)：
-60V
- Id at 25℃(max)：
-18A
- PD(max)：
32W
- Vgs(th)typ(V)：
-1.7V
- RDS(on)(typ)(@10V)：
57mΩ
- RDS(on)(typ)(@4.5V)：
69mΩ
- Qg(nC)：
25
- Ciss：
1446
- Crss：
58
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
25+23+ |
QFN |
32690 |
绝对原装正品全新进口深圳现货 |
|||
GL |
25+ |
SOP16 |
2685 |
原装优势!自家现货供应!欢迎来电! |
|||
INFINEON |
25+ |
SSOP36 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SONY |
24+ |
QFN |
18 |
||||
LT |
26+ |
SSOP |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
SONY/索尼 |
2403+ |
QFN |
11809 |
原装现货!欢迎随时咨询! |
|||
LX |
04+ |
SOP-16P |
437 |
全新 发货1-2天 |
|||
LT |
23+ |
SSOP |
5000 |
原装正品,假一罚十 |
|||
TI |
2023+ |
6SOT223 |
50000 |
原装现货 |
|||
INFINEON |
23+ |
SSOP36 |
8000 |
只做原装现货 |
G700规格书下载地址
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DdatasheetPDF页码索引
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