INSULATED GATE BIPOLAR TRANSISTOR

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. Benefits • Generation 4 IGBTs offer highest effic

INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. Benefits • Generation 4

INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free Benefits •

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. Benefits • Generation 4 IGBTs offer highest

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power supply. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated ve