P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Power Management Switch DC-DC Converters • Suitable for high-density mounting due to compact package • Low on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V) : Ron = 85 mΩ (max) (@VGS = −10 V) • High-speed switching

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel Enhancement Mode Power Mos.FET

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