丝印代码：G3035；P-Channel Enhancement Mode Power MOSFET

Description The G3035 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G3035；P-Channel Enhancement Mode Power MOSFET

Description The G3035A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G3035；PWM applications

Description The G3035L uses advanced trench technology to provide excellent RDS(ON) , This device is suitable for use as a load switch or in PWM applications. Application PWM applications Load switch Power management

丝印代码：G3035；PWM applications

Description The G3035LA uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. AEC-Q101 Qualified Application ● PWM applications ● Load switch ● Power management

Trench Mosfet

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The d

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 60 Volts CURRENT 30 Amperes)

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