Voltage-Controlled Attenuator Module 100 to 2000 MHz

Voltage-Controlled Attenuator Module 100 to 2000 MHz

Description The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount

5WATTS SINGLE OUTPUT DC/DC INDUSTRIAL

Features • Low ripple • Miniature case size • Low EMI/RFI sinewave oscillator • Proportional input/output • User-selectable output polarity • Low cost/high performance • MTBF >2.29 million hrs per Bellcore TR-332

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

Single Pole Single Throw - Normally Closed

FEATURES Low stable contact resistance for high carry current and low voltage drop Low loss in RF circuits Mounting options in any axis

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 3000V 1.5W 电源 - 板安装 直流转换器

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 3000V 1.5W 电源 - 板安装 直流转换器

N and P Channel Enhancement Mode Power MOSFET

Description The G300C03L6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G300N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G300N04LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

DUAL N-Channel Enhancement Mode Power MOSFET

Description The G300N04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G300P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G300P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G300P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G300P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-CHANNEL MOSFET

Description N-channel enhancement-mode MOSFET Features • Low on-resistance. • Fast switching speed. • Low voltage drive (2.5V) makes this device ideal for portable equipment. • Easily designed drive circuits. • Easy to parallel.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G3018K is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outlin

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G301K is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

P-Channel Enhancement Mode Power MOSFET

Description The G3035 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G3035A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

PWM applications

Description The G3035L uses advanced trench technology to provide excellent RDS(ON) , This device is suitable for use as a load switch or in PWM applications. Application PWM applications Load switch Power management

PWM applications

Description The G3035LA uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. AEC-Q101 Qualified Application ● PWM applications ● Load switch ● Power management

GaAsP photodiode

GaAsP photodiode Diffusion type Photodiode for visible light detection Features ● Low dark current ● High stability Applications ● Analytical instrument ● Color identification

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

G-Series Power Receptacle Connector: Female, front mount with flange, 4-pin (3PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Female, front mount with flange, 4-pin (3+PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3+PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3PE; PE at cable outlet), black body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3+PE; PE at cable outlet), black body; 230 V AC/DC, 10 A

High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

Power switching application

Description The G30N02 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Load switching LED power supply

Power switching application

Description The G30N02 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Load switching LED power supply

N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3-L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

600V, SMPS Series N-Channel IGBT with

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

600V, SMPS Series N-Channel IGBT with

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

G-Series Power Field Attachable Connector: Female, angled, 4-pin (3PE), black body, solder type; 230 V AC/DC, 6 A

Product Description G-Series Power Field Attachable Connector: Female, angled, 4-pin (3+PE), black body, solder type; 230 V AC/DC, 6 A

G-Series Power Field Attachable Connector: Female, angled, 4-pin (3PE), black body, solder type; 230 V AC/DC, 6 A

Product Description G-Series Power Field Attachable Connector: Female, angled, 4-pin (3+PE), black body, solder type; 230 V AC/DC, 6 A

Cables and Connectors Customizable

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Olympian Direct Mount Ultra Wide-Band

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Heavy duty screw mount

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