| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.185Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelEnhancementModeMOSFET 文件：281.56 Kbytes Page：4 Pages | DACO DACO |  | | |
N-ChannelPowerMOSFET 文件：2.88047 Mbytes Page：6 Pages | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-3PN |
30000 |
原装正品公司现货,假一赔十! |
|||
ONSEMI |
23+ |
TO-3P-3L |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ON |
23+/24+ |
TO-247 |
15000 |
原装进口、正品保障、合作持久 |
|||
FAIRCHILD/仙童 |
24+ |
TO-3P |
154712 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
23+ |
TO-247 |
12054 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRC |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FAIRCHILD |
22+23+ |
TO247 |
13511 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
21+ |
TO-3PN |
8080 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
2024+原装现货 |
TO247 |
8950 |
BOM配单专家,发货快,价格低 |
|||
FAIRCHILD |
15+ |
NA |
23 |
全新原装!优势库存热卖中! |
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2022-11-28G2401CG
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-16G2995-DDR终端稳压器
概述在G2995是一个线性稳压器设计，以满足JEDECSSTL-2和SSTL-3（系列存根终止逻辑）的DDR-SDRAM终端规范。它包含一个高速运算放大器，可提供出色的负载瞬态响应。这设备可以提供1.5A的连续电流和瞬态峰达至所需的应用程序中的3ADDR-SDRAM终止。具有独立VSENSE引脚，G2995可提供卓越的负载调节。在G2995提供作为参考VREF输出芯片组和DIMM的申请。在G2995可以轻松地提供准确的VTT和VREF电压，无需外部电阻器的印刷电路板领域可以减少。静态电流低至作为280μA@2.5V。因此，电力消耗满足低功耗的应用。
2013-1-29
DdatasheetPDF页码索引
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