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位置：首页 > IC中文资料第12899页 > G23

G23价格

参考价格：￥0.5850

型号：G2305 品牌：GTM 备注：这里有G23多少钱，2025年最近7天走势，今日出价，今日竞价，G23批发/采购报价，G23行情走势销售排行榜，G23报价。
型号 功能描述 生产厂家&企业 LOGO 操作
G2300

CMOS Positive Voltage Regulator

Description TheG2300providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheG2300isuniversallyusedforallcommercial-industrialsurfacemountapplications. Features *Lowon-resistance *Capableof2.5Vgatedrive *SmallPackageOutl

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2302

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2302providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. Features *Capableof2.5Vgatedrive *SmallPackageOutline

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2303

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2303providesthedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. Features •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged Applications •PowerManagementinNotebookComputer •PortableEquipmen

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2304

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2304providesthedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. Features •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged Applications •PowerManagementinNotebookComputer •PortableEquipmen

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2304

N-Channel Enhancement Mode Power MOSFET

Description TheG2304usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2304A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2304Autilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2304Aisuniversallyusedforallcommercial-industrialapplications. Features *SimpleDriveRequirement *SmallPackageOutlin

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2304A

N-Channel Enhancement Mode Power MOSFET

Description TheG2304Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2305

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2305providesthedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheG2305isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2305

P-Channel Enhancement Mode Power MOSFET

Description TheG2305usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2305A

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2305Aprovidethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheG2305Aisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters. F

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2305A

P-Channel Enhancement Mode Power MOSFET

Description TheG2305Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2305A

P-Channel Enhancement Mode Power MOSFET

Description TheG2305Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2305A

P-Channel Enhancement Mode Power MOSFET

Description TheG2305Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2306

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2306utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageisuniversallyusedforallcommercial-industrialapplications. Features •Capableof2.5Vgatedrive! •Loweron-r

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2306A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2306Autilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2306Aisuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Loweron-resistanc

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2307

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2307providesthedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheG2307isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters. Applic

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2308

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2308utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2308isuniversallyusedforallcommercial-industrialapplications. Features *SimpleDriveRequirement *SmallPackageOutline

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2308B

Oblong, Domed, PCB Mount

Oblong,Domed,PCBMount RightAngleViewIndicatorArray TheG23XXBindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasstatusindicatorswhenusedinconjunctionw

idea

IDEA.lnc.

idea
G2308E

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2308Eutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageisuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Loweron-r

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2308S

Oblong, Domed, PCB Mount

Oblong,Domed,PCBMount DirectViewIndicatorArray TheG23XXSindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasastatusindicatorwhenusedinconjunctionwith

idea

IDEA.lnc.

idea
G2309

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS-30V RDS(ON)75m ID-3.7A Description TheG2309providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness.TheG2309isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplic

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G230P06D5

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06F

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Fusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06K

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06KA

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06M

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06S

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G230P06T

P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2310

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2310utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2310isuniversallyusedforallcommercial-industrialapplications. Features *SimpleDriveRequirement *SmallPackageOutline

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2312

N-Channel Enhancement Mode Power MOSFET

Description TheG2312usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G2313

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2313providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheG2313isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters. Features *

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2314

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2314utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2314isuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Lowon-resistance

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G23N60UF

Ultra-Fast IGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
G23N60UFD

Ultra-Fast IGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
G2300

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：326.54 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2301

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：391.79 Kbytes Page：4 Pages

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GTM
G2301

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：403.04 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2302

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：371.29 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2302

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
G2303

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：405.64 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2304

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：402.31 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2304A

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：374.52 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2305

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：394.37 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2305A

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：388.47 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2306

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：395.84 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2306A

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：333.25 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2306A

N-Channel 30-V (D-S) MOSFET

文件：2.00995 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
G2307

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：401.27 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2307

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
G2308

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：354.93 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2308E

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：333.95 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2309

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：381.02 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2309

P-Channel 30 V (D-S) MOSFET

文件：2.06125 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
G231

Compact MiniDIP, 2W Single & Dual Output DC/DC Converters

文件：75.01 Kbytes Page：2 Pages

MPD

MPD (Memory Protection Devices)

MPD
G2310

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：353.75 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2311

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
G2312

Break-Away Bumpers

文件：132.1 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
G2312

Break-Away Bumpers

文件：132.09 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
G2313

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：359.31 Kbytes Page：4 Pages

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

ETL
G2313

Break-Away Bumpers

文件：132.09 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco

G23产品属性

  • 类型

    描述

  • 型号

    G23

  • 制造商

    GTM

  • 制造商全称

    GTM

  • 功能描述

    CMOS Positive Voltage Regulator

G23供应商更多...

更新时间：2025-7-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
G2300
GTM
24+
NA/
9000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市凌旭科技有限公司
G2301
GTM
2016+
SOT23-3
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
G2300
GTM
24+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市威雅利发展有限公司
G2300
GTM
20+
SOT-23
12500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科芯源微电子有限公司
G2300
GTM
25+
SOT-23
9000
原装正品,假一罚十!
询价
深圳市明嘉莱科技有限公司
G2300
GTM
24+
SOT-23
880000
明嘉莱只做原装正品现货
询价
深圳兆威电子有限公司
G2300
GTM
23+
.
53000
原装正品现货
询价
深圳市汇莱威科技有限公司
G2300
GTM
24+
SOT23-3
500138
免费送样原盒原包现货一手渠道联系
询价
深圳市一线半导体有限公司
G2301
GTM
24+
SOT23
85600
询价
深圳市勤思达科技有限公司
G2300
GTM
24+
SOT-23
5000
全新原装正品,现货销售
询价

G23芯片相关品牌

  • Actel
  • APEX-ELECTRONICS
  • bel
  • CALIBER
  • EMERSON-NETWORKPOWER
  • NJRC
  • PANDUIT
  • RichTek
  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

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