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G20晶体管资料
G20别名:G20三极管、G20晶体管、G20晶体三极管
G20生产厂家:中国大陆半导体企业
G20制作材料:
G20性质:射频/高频放大 (HF)_静噪放大 (LN)_宽频带放大
G20封装形式:直插封装
G20极限工作电压:
G20最大电流允许值:0.1A
G20最大工作频率:<1MHZ或未知
G20引脚数:3
G20最大耗散功率:0.625W
G20放大倍数:
G20图片代号:A-11
G20vtest:0
G20htest:999900
- G20atest:0.1
G20wtest:0.625
G20代换 G20用什么型号代替:
G20价格
参考价格:¥18.1927
型号:G20,AL 品牌:Serpac 备注:这里有G20多少钱,2025年最近7天走势,今日出价,今日竞价,G20批发/采购报价,G20行情走势销售排行榜,G20报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
G20 | ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS PRODUCTDESCRIPTION TheGSeriesisalineofminiature,versatilecomponentlevelbuildingblocksthatprovideupto6kV,positiveornegative,inacompactPCmountpackage.Theisolatedoutputisdirectlyproportionaltotheinput,andislinearfromapproximately0.7voltsin.Excellentflter | XPPOWER XP Power Limited | ||
G20 | Rack and Panel Connectors Side Mount FEATURES •Bodycomponentsavailablewithanydesiredpinand socketcombination •Contactsfloatinmoldingtoaidinaligningandin withstandingvibration •Polarizationaccomplishedbyreversedpinandsocket combination •Barriersforincreasedcreepagedistance •Thruholdpermitsus | VishayVishay Siliconix 威世科技威世科技半导体 | ||
G20 | Single Pole Single Throw - Normally Open FEATURES Lowstablecontactresistanceforhighcarrycurrent andlowvoltagedrop LowlossinRFcircuits Mountingoptionsinanyaxis | Sensata Sensata Technologies, Inc. | ||
G20 | 5WATTS SINGLE OUTPUT DC/DC INDUSTRIAL Features •Lowripple •Miniaturecasesize •LowEMI/RFIsinewaveoscillator •Proportionalinput/output •User-selectableoutputpolarity •Lowcost/highperformance •MTBF>2.29millionhrsperBellcoreTR-332 | POWERBOX Powerbox manufactures | ||
G20 | Silicon Z?밆iodes FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | ||
G20 | 5 current ratings 文件:3.18497 Mbytes Page:3 Pages | CHERRY Cherry Semiconductor Corporation | ||
G20 | Protective Cover, G20, Receiver 文件:1.40149 Mbytes Page:2 Pages | VPC Virginia Panel Corporation | ||
Silicon Z?밆iodes FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2002Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power switching application Description TheG2003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitchingapplication | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2009Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description TheG200P04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description TheG200P04D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Dual P-Channel Enhancement Mode Power MOSFET Description TheG200P04S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2012usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2012AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS PRODUCTDESCRIPTION TheGSeriesisalineofminiature,versatilecomponentlevelbuildingblocksthatprovideupto6kV,positiveornegative,inacompactPCmountpackage.Theisolatedoutputisdirectlyproportionaltotheinput,andislinearfromapproximately0.7voltsin.Excellentflter | XPPOWER XP Power Limited | |||
High speed switching series third generation HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoH | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm² ProductDescription G-SeriesPowerSingle-EndedCordset:Male,angled,3-pin(2+PE),greybody,230VAC/DC,10A;PVCgreycable,0.75mm² | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG20N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitch DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheG20N06D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | Intersil Intersil Corporation | |||
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos | Intersil Intersil Corporation | |||
63A, 1200V, NPT Series N-Channel IGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | Intersil Intersil Corporation | |||
34A, 1200V N-Channel IGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | Intersil Intersil Corporation | |||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
45A, 600V, UFS Series N-Channel IGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
High Speed IGBT in NPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
P-Channel Enhancement Mode Power MOSFET Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
G-Series Power Field Attachable Connector: Female, angled, 3-pin (2PE), grey body, solder type; 230 V AC/DC, 6 A ProductDescription G-SeriesPowerFieldAttachableConnector:Female,angled,3-pin(2+PE),greybody,soldertype;230VAC/DC,6A | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
包装:散装 描述:BOX ABS ALMOND 4.380\ 盒子,外壳,机架 箱 | Serpac Serpac Electronics Enclosures | |||
包装:散装 描述:BOX ABS BLACK 4.380\ 盒子,外壳,机架 箱 | Serpac Serpac Electronics Enclosures | |||
Covert and Vandal Resistant 文件:1.51296 Mbytes Page:15 Pages | TAOGLAS Taoglas antenna solutions | |||
Hercules Covert Wall and Cabinet Mounted Cellular Antenna 文件:1.27558 Mbytes Page:15 Pages | TAOGLAS Taoglas antenna solutions | |||
Hercules Covert Wall and Cabinet Mounted Cellular Antenna 文件:1.27558 Mbytes Page:15 Pages | TAOGLAS Taoglas antenna solutions | |||
Compact MiniDIP, 2W Single & Dual Output DC/DC Converters 文件:75.01 Kbytes Page:2 Pages | MPD MPD (Memory Protection Devices) | |||
Axial Vitreous Leaded Wirewound Resistors 文件:133.1 Kbytes Page:7 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Miniature Based LED Lamps 文件:4.95484 Mbytes Page:28 Pages | LEDTRONICS LEDTRONICS, INC | |||
Rubber Push-In Bumpers 文件:120.08 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
All Dimension In MM 文件:97.94 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
All Dimension In MM 文件:62.88 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
All Dimension In MM 文件:26.07 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
All Dimension In MM 文件:63.03 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
61CH serial input motor driver IC for DSC 文件:95.2 Kbytes Page:1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 | |||
Double Pole General Purpose 文件:532.27 Kbytes Page:3 Pages | ZFSWITCHESZF Friedrichshafen AG 采埃孚采埃孚股份公司 |
G20产品属性
- 类型
描述
- 型号
G20
- 制造商
VPC
- 制造商全称
VPC
- 功能描述
Protective Cover, G20, Receiver
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GMT/致新 |
24+ |
SSOP-16 |
20000 |
原装正品支持实单 |
|||
GMT/致新 |
1513+ |
NA |
2292 |
||||
WESTCODE/西码 |
22+ |
MODULE |
4500 |
WESTCODE/西码模块系列在售 |
|||
WESTCODE |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
WESTCODE |
23+ |
模块 |
800 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
WESTCODE |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
Vishay(威世) |
24+ |
标准封装 |
7315 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
ST/意法 |
18+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
FAIRCHILD/仙童 |
25+ |
TO 3P |
154910 |
只做原装正品现货 |
|||
FSC/仙童 |
24+ |
TO-247 |
6250 |
全新原装现货,欢迎询购!! |
G20规格书下载地址
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