N-Channel Enhancement Mode Power MOSFET

Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

14.7A, 100V (D-S) N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N10is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10is suitable for high efficiency switching DC/DC converter, LCD display inverter and l

100V N-Channel Power MOSFET

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P-Channel 30 V (D-S) MOSFET

文件：1.02293 Mbytes Page：8 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.0134 Mbytes Page：7 Pages