| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G12N60D1D | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode | RENESAS 瑞萨 |   | |
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mo | Intersil | | ||
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mo | Intersil | | ||
12A, 600V N-Channel IGBT Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode | Intersil | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOCOS/东高志 |
25+ |
DIP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
GOFORD |
23+ |
DFN3X3-8L |
50000 |
原装正品 支持实单 |
|||
GOFORD谷峰 |
2450+ |
PDFN-8(3x3.1) |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
22+ |
MSOP-8 |
5000 |
进口原装!现货库存 |
|||
CHERRY |
新 |
29 |
全新原装 货期两周 |
||||
GOFORD/谷峰 |
23+ |
TO-252 |
63999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
25+ |
SMD |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
||||
GOFORD |
24+ |
DFN3X3-8L |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
23+ |
TO220 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO220 |
7000 |
G12N60D1D芯片相关品牌
G12N60D1D规格书下载地址
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2019-4-16
DdatasheetPDF页码索引
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