UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moder

12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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