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位置：首页 > IC中文资料第4774页 > G10

G10晶体管资料

  • G10别名：G10三极管、G10晶体管、G10晶体三极管

  • G10生产厂家：中国大陆半导体企业

  • G10制作材料：Si-N+R

  • G10性质：表面帖装型 （SMD）_差分放大器射极输出 （Dual）

  • G10封装形式：贴片封装

  • G10极限工作电压：50V

  • G10最大电流允许值：0.1A

  • G10最大工作频率：<1MHZ或未知

  • G10引脚数：5

  • G10最大耗散功率：

  • G10放大倍数：

  • G10图片代号：H-21

  • G10vtest：50

  • G10htest：999900

  • G10atest：0.05

  • G10wtest：0

  • G10代换 G10用什么型号代替：FMG10A,

G10价格

参考价格：￥14.3722

型号：G10,AL 品牌：Serpac 备注：这里有G10多少钱，2025年最近7天走势，今日出价，今日竞价，G10批发/采购报价，G10行情走势销售排行榜，G10报价。
型号 功能描述 生产厂家&企业 LOGO 操作
G10

5WATTS SINGLE OUTPUT DC/DC INDUSTRIAL

Features •Lowripple •Miniaturecasesize •LowEMI/RFIsinewaveoscillator •Proportionalinput/output •User-selectableoutputpolarity •Lowcost/highperformance •MTBF>2.29millionhrsperBellcoreTR-332

POWERBOX

Powerbox manufactures

POWERBOX
G10

Receiver, G18, 18 Module, with Slide Mounting Kit (slide kit required)

FeaturesandBenefits •Increaseseaseofaccessingwiresandchassis •Decreaseschanceofpinchedwiresandlossofsignalintegrity •Enablesshortercablelength •Slidessupportupto180lbs •Easytoconfigurepackages

VPC

Virginia Panel Corporation

VPC
G10

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
G10

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCTDESCRIPTION TheGSeriesisalineofminiature,versatilecomponentlevelbuildingblocksthatprovideupto6kV,positiveornegative,inacompactPCmountpackage.Theisolatedoutputisdirectlyproportionaltotheinput,andislinearfromapproximately0.7voltsin.Excellentflter

XPPOWER

XP Power Limited

XPPOWER
G10

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 1.5W 电源 - 板安装 直流转换器

XPP

XP Power

XPP
G10

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 1.5W 电源 - 板安装 直流转换器

XPP

XP Power

XPP
G100

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
G1002

N-Channel Enhancement Mode Power MOSFET

Description TheG1002usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1002A

N-Channel Enhancement Mode Power MOSFET

Description TheG1002Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1002L

N-Channel Enhancement Mode Power MOSFET

Description TheG1002Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1003A

N-Channel Enhancement MOSFET

Description TheG1003Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ItisESDprotected. GeneralFeatures HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevolta

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
G1003A

N-Channel Enhancement Mode Power MOSFET

Description TheG1003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1003A-SOT23-3L

High density cell design for ultra low Rdson

Description TheG1003AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.ItisESDprotected. GeneralFeatures ●VDSSRDS(ON)@10V(typ)ID 100V135mΩ5A ●Highdensi

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
G1003B

N-Channel Enhancement Mode Power MOSFET

Description TheG1003Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1005

PWM applications

TheG1005usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. Application ●PWMapplications ●Loadswitch ●Powermanagement

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1006LE

N-Channel Enhancement Mode Power MOSFET

Description TheG1006LEusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1007

Power switching application

GeneralDescription TheG1007combinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisidealfor powerswitchingapplicationandLEDbacklighting. Application ●Powerswitchingapplication ●LEDbacklighting

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G1008B

DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG1008Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100C04D52

N and P Channel Enhancement Mode Power MOSFET

Description TheG100C04D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100N03

N-Channel Enhancement Mode Power MOSFET

Description TheG100N03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100N03D5

N-Channel Enhancement Mode Power MOSFET

Description TheG100N03D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100N03D5A

N-Channel Enhancement Mode Power MOSFET

Description TheG100N03D5Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100N04T

PWM applications

Description TheG100N04Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●PWM ●LoadSwitching

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100P04D5

P-Channel Enhancement Mode Power MOSFET

Description TheG100P04D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100P04KA

P-Channel Enhancement Mode Power MOSFET

Description TheG100P04KAusesadvancedtrenchtechnologytoprovid eexcellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G100P04KH

P-Channel Enhancement Mode Power MOSFET

Description TheG100P04KHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G104

Diecast Aluminium Enclosures

Features •DesignedtomeetIP65andNEMA4throughtheuseofneoprenegasketwiththeuniversaltongueandgroovesealsystem •Idealforindustrialandautomationengineering •Wallmountingholesandlidfixingscrewsareoutsidethesealingareaforrealsealingprotection •Finish:Natur

MULTICOMPMulticomp Pro

易络盟易络盟电子（中国）有限公司

MULTICOMP
G104V1-T01

TFT LCD Approval Specification

GENERALDESCRIPTION OVERVIEW G104V1-T01isan10.4inchTFTLiquidCrystalDisplaymodulewitha2-CCFLBacklightunitanda-31-pin-and-1ch-TTLinterface.Thismodulesupports640x480VGAmodeandcandisplay262,144colors.TheinvertermoduleforBacklightisnotbuiltin. FEATURES

AZDISPLAYS

AZ Displays

AZDISPLAYS
G104X1-L01

TFT LCD Approval Specification

OVERVIEW G104X1-L01isa10.4”TFTLiquidCrystalDisplaymodulewith2-CCFLbacklightunitand30-pin-and-1chLVDSinterface.Thisproductsupports1024x768XGAformatandcandisplaytrue16.2Mcolors(6-bitscolorswithFRC).Theinvertermoduleforbacklightisnotbuilt-in. FEATURES -E

AZDISPLAYS

AZ Displays

AZDISPLAYS
G104X1-L03

TFT LCD Tentative Specification

OVERVIEW G104X1-L03isa10.4”TFTLiquidCrystalDisplaymodulewithLEDbacklightunitand30-pin-and-1chLVDSinterface.Thisproductsupports1024x768XGAformatandcandisplaytrue16.2Mcolors(6-bitscolorswithFRC).TheconvertermoduleforLEDbacklightisbuilt-in. FEATURES

AZDISPLAYS

AZ Displays

AZDISPLAYS
G105

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

EIC

EIC discrete Semiconductors

EIC
G105

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
G105C

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts FEATURES: *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC
G105C

Color band denotes cathode end

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts FEATURES: *Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
G106

Diecast Aluminium Enclosures

Features •DesignedtomeetIP65andNEMA4throughtheuseofneoprenegasketwiththeuniversaltongueandgroovesealsystem •Idealforindustrialandautomationengineering •Wallmountingholesandlidfixingscrewsareoutsidethesealingareaforrealsealingprotection •Finish:Natur

MULTICOMPMulticomp Pro

易络盟易络盟电子（中国）有限公司

MULTICOMP
G10CT

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCTDESCRIPTION TheGSeriesisalineofminiature,versatilecomponentlevelbuildingblocksthatprovideupto6kV,positiveornegative,inacompactPCmountpackage.Theisolatedoutputisdirectlyproportionaltotheinput,andislinearfromapproximately0.7voltsin.Excellentflter

XPPOWER

XP Power Limited

XPPOWER
G10K4D453

Surface Sensor for High Rel & Aerospace

FEATURES ESCCqualified. ESCCDetailSpecificationNo.4006014 ESCCPartNo.400601409. Flataluminumhousing. Radiationcrosslinkedmodifiedfluoropolymer insulation. Operatingtemperaturerange:-60°Cto+160°C. APPLICATIONS Satelliteelectricmotors. Monitoringofgearboxesinsat

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC
G10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
G10N03S

N-Channel Enhancement Mode Power MOSFET

Description TheG10N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10N10A

Power switching application

Description TheG10N10Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitchingapplication Hardswitchedandhighfrequencycircuits Uninterruptiblepowersupply

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10N10AS

DC/DC Primary Side Switch

Description TheG10N10ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●DC/DCPrimarySideSwitch ●Telecom/Server ●SynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10N60A

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
G10N65F

N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lActivepowerfactorcorrection l

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10N80F

N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10P03

P-Channel Enhancement Mode Power MOSFET

Description TheG10P03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
G10T60

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5s Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply TRENCHSTOP™andFieldstoptechnologyfor60

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
G100001

All Dimension In MM

文件：38.77 Kbytes Page：1 Pages

E-SWITCH

E-switch

E-SWITCH
G10000GW1

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G10000GW2

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G10000GW3

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G10000GW4

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G10000GW5

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G10000RRR

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
G1000600250G

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000800300G

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000800400G

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000P600

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000P600H

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000P800

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
G1000P800H

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

G10产品属性

  • 类型

    描述

  • 型号

    G10

  • 制造商

    Penn Elcom

  • 功能描述

    Speaker Grill for 10" Speakers

  • 制造商

    PENN ELCOM

  • 功能描述

    SPEAKER WAFFLE GRILL FOR 10 INCH SPEAKERS

G10供应商更多...

更新时间：2025-5-13 10:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
G10100CTW
LT原装
25+23+
TO-220
23785
绝对原装正品全新进口深圳现货
询价
深圳市天芯威科技有限公司
G1084-33T53U
GMT
22+23+
TO263
8000
新到现货，只做原装进口
询价
深圳市高捷芯城科技有限公司
G10B3E102KA5B0S0N0
STE(松田)
24+
插件,P=7.5mm
8215
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
G10XB60
GULFSEMI
24+
NA/
3330
原装现货,当天可交货,原型号开票
询价
深圳市昂芯微科技有限公司
G1010AC0A
TRF&PARTRON
23+
SMD
8678
原厂原装
询价
深圳市赛能新源半导体有限公司
G1085T43UF
GMT
24+
TO-252
56000
公司进口原装现货 批量特价支持
询价
深圳市佳杰伟业科技有限公司
G10100F4-7
LT
2402+
SMD
3668
优势代理渠道,原装现货,可全系列订货
询价
深圳兆威电子有限公司
G1084-18T43UF
AIC
23+
TO-252
860
只做原装全系列供应价格优势
询价
深圳市毅创腾电子科技有限公司
G1010
SONY
23+
TO-8P
155
专营高频管模块,全新原装!
询价
深圳市一线半导体有限公司
G1053
24+
TSSOP
40690
询价

G10芯片相关品牌

  • AAO
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

G10规格书下载地址

G10参数引脚图相关

G10数据表相关新闻

DdatasheetPDF页码索引

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