位置:MBM29LV160BE70TN > MBM29LV160BE70TN详情

MBM29LV160BE70TN中文资料

厂家型号

MBM29LV160BE70TN

文件大小

653.74Kbytes

页面数量

59

功能描述

16M (2M X 8/1M X 16) BIT

16M(2M X 8/1M X 16) BIT

数据手册

下载地址一下载地址二到原厂下载

生产厂商

FUJITSU

MBM29LV160BE70TN数据手册规格书PDF详情

■ GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type)

48-pin CSOP (Package suffix: PCV)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode

One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector Protection command

• Fast Programming Function by Extended command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin

• In accordance with CFI (Common Flash Memory Interface)

MBM29LV160BE70TN产品属性

  • 类型

    描述

  • 型号

    MBM29LV160BE70TN

  • 制造商

    FUJITSU

  • 制造商全称

    Fujitsu Component Limited.

  • 功能描述

    16M(2M X 8/1M X 16) BIT

更新时间:2025-10-12 22:58:00
供应商 型号 品牌 批号 封装 库存 备注 价格
FUJITSU
2016+
TSOP
9000
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FUJITSU
1728+
?
6500
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FUJITSU
23+
TSSOP
8560
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FUJITSU
23+
TSSOP
1875
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FUJITSU
24+
TSOP
35200
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FUJITSU/富士通
24+
TSOP
8540
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FUJITSU/富士通
23+
TSSOP
89630
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FUJITSU/富士通
24+
NA/
200
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FUJITSU/富士通
2447
TSOP
100500
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FUJITSU/富士通
23+
TSOP
50000
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