DESCRIPTION

➤ IRF830 is 500V High voltage N-Channel enhancement

mode power MOS-FET chip fabricated in advanced

silicon epitaxial planar technology;

➤ Advanced termination scheme to provide enhanced voltageblocking capability;

➤ Avalanche Energy Specified;

➤ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode;

➤ IRF830 product is widely used in AC-DC power

suppliers, DC-DC converters and H-bridge PWM motor

drivers.

FEATURES

* 4.4A, 500V, RDS(ON)=1.5Ω

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

* Single Pulse Avalanche EnergyRated

* Linear Transfer Characteristics

* High Input Impedance