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FTD1781KRLT1G中文资料
FTD1781KRLT1G数据手册规格书PDF详情
Features
1) Very low VCE(sat).
VCE(sat) 0.4 V (Typ.)
(IC / IB = 500mA / 50mA)
2) High current capacity in compact package.
3) Complements the FTB1197K
4) We declare that the material of product compliance with RoHS requirements.
Structure
Epitaxial planar type
NPN silicon transistor
更新时间：2025-10-9 14:01:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
|||
VB |
25+ |
TSSOP8 |
18985 |
原装正品,假一罚十! |
|||
S |
20+ |
TSSOP8 |
2960 |
诚信交易大量库存现货 |
|||
SANYO |
1709+ |
TSSOP-8 |
32500 |
普通 |
|||
SANYO |
24+ |
SOP-8 |
1562 |
||||
SANYO |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
|||
SANYO |
25+ |
SOP-8 |
18000 |
原厂直接发货进口原装 |
|||
SANYO |
2023+ |
SOP-8 |
50000 |
原装现货 |
|||
SANYO |
17+ |
TSSOP8 |
6200 |
100%原装正品现货 |
|||
SANYO/三洋 |
23+ |
TSSOP8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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