RF LDMOS Wideband Integrated Power Amplifier

The MW7IC915N wideband integrated circuit is designed with on-chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Driver Application — 900 MHz

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,

IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB

@ 0.01 Probability on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout)

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 30 to 41.5 dBm CW Pout.

• Typical Pout @ 1 dB Compression Point 15.5 Watts CW

Driver Application — 700 MHz

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,

IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB

@ 0.01 Probability on CCDF.

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.