1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP

Power Gain — 18 dB

Drain Efficiency — 33

IMD — -34 dBc

• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP

Power Gain — 19 dB

Drain Efficiency — 33

IMD — -39 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip RF Feedback for Broadband Stability

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.