10--235 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.

• Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 24 dB

Drain Efficiency — 67.5

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• CW Operation Capability with Adequate Cooling

• Qualified Up to a Maximum of 50 VDD Operation

• Integrated ESD Protection

• Designed for Push--Pull Operation

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.