RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

GSM Application

• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts

CW, f = 1990 MHz

Power Gain — 15 dB

Drain Efficiency - 50

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA,

Pout = 25 Watts Avg., Full Frequency Band (1805-1880 MHz or

1930-1990 MHz)

Power Gain — 15.5 dB

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 2 rms

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• 225°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.