RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

GSM Application

• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =

100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain - 17.5 dB

Drain Efficiency - 60

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =

50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain — 18 dB

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 2.3 rms

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.