RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.

• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,

Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01 Probability on CCDF.

Power Gain — 14.5 dB

Drain Efficiency — 26

IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.