Introduction

The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device.

The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.

Features

The MBC13917 has the following features:

• Usable frequency range = 100 MHz to 2500 MHz

• 27 dB typical gain at 434 MHz, Vcc = 2.7V

• NFmin (device level) = 0.95 dB @ 434 MHz

• NFmin (device level) = 0.95 dB @ 900 MHz

• 6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V

• 46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V

• 4.7 mA typical bias current at Vcc = 2.7V

• 2.7V to 3.3V supply

• Industry standard MLPD-6 leadless package

• Available only in tape and reel packaging

Applications

Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in:

• Buffer amplifiers

• Mixers

• IF amplifiers

• Voltage controlled oscillators (VCOs)

• Low power amplifiers

• Gain block in RF end products

• Smart metering

• Industrial—scientific and medical (ISM)

• Consumer—WLAN, 802.11 b/g

• Auto—TPMS, RKE, GPS, active antennas, wireless security