600mA Silicon NPN Epitaxial Planar Transistor

Features

• High collector-emitterbreakdien voltage.

(BVCEO = 140V~ 160V@IC=1mA)

• This device is designed for general purpose high voltage

amplifiers and gas discharge display driving

• Epitaxial planar die construction

• Complememntary PNP type available (FMBT5401)

• Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

• Suffix -H indicates Halogen-free part, ex.FMBT5550-H.