DESCRIPTION AND APPLICATIONS

The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FP1510 also features Si3N4 passivation and is available in die form or in other packages.

FEATURES

♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz

♦ 19 dB Power Gain at 1.8 GHz

♦ 1.0 dB Noise Figure

♦ 45 dBm Output IP3 at 1.8 GHz

♦ 50 Power-Added Efficiency