GENERAL DESCRIPTION:

The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation.

FEATURES:

• Balanced low noise amplifier module

• Excellent Noise figure: 0.4dB at 1850MHz

• Low drive current: 40mA typical (3.0V)

• Combined IP3: 36dBm (100mA)

• Combined P1dB: 23dBm (100mA)

• Small footprint: 4mm x 4mm x 0.9mm QFN

• RoHS compliant: (Directive 2002/95/EC)

TYPICAL APPLICATIONS:

• Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations

• High intercept-point LNAs