General Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 12V).

Features

• 7.8 A, 20 V RDS(ON) = 15 mΩ @ VGS = 4.5 V

RDS(ON) = 22 mΩ @ VGS = 2.5 V

• Extended VGSS range (±12V) for battery applications

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Battery protection

• DC/DC conversion

• Power management

• Load switch