General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

■ 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V

RDS(ON) = 0.035 Ω @ VGS = 4.5 V.

■ Fast switching speed.

■ Low gate charge (typical 9 nC).

■ High performance trench technology for extremely low

RDS(ON).

■ High power and current handling capability.