General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

• 7.6 A, 80 V. RDS(ON) = 0.029 Ω @ VGS = 10 V

RDS(ON) = 0.033 Ω @ VGS = 6 V.

• Low gate charge (34nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low RDS(ON).

• High power and current handling capability.