General Description

This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• 8 A, 60 V. RDS(on) = 0.020 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.

• Low gate charge (30nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

Applications

• DC/DC converter

• Load switch

• Motor drives