General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Features

• 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V

RDS(on) = 0.032 Ω @ VGS = 2.5 V

• Fast switching speed.

• Low gate charge (10.5nC typical).

• High performance trench technology for extremely low RDS(ON).

• SuperSOTTM-6 package: small footprint (72 smaller than standard SO-8); low profile (1mm thick).

Applications

• DC/DC converter

• Load switch

• Battery Protection